PART |
Description |
Maker |
RJK03N4DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N6DPA |
30V, 40A, 3.8m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
|
International Rectifier
|
RJK0452DPB13 RJK0452DPB-00-J5 |
40V, 45A, 3.5m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
XC9250B083QR-G XC9251 |
30V Driver Transistor Built-In Step-Down DC/DC Converters
|
Torex Semiconductor
|
FMC6G10US60 |
IGBT Compact & Complex Module Sweep Function Generator; Bandwidth Max:20MHz; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
Fairchild Semiconductor Corporation
|
FMC7G30US60 |
IGBT Compact & Complex Module Arbitrary/Function Generator; Bandwidth Max:20MHz; Amplitude Accuracy :0.01dB; Frequency Max:20MHz; Frequency Min:0.1Hz; Waveforms:27 Built-in RoHS Compliant: NA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
DTB723YE DTB723YE09 DTB723YM |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTB713ZE09 |
-200mA / -30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
DTD713ZM DTD713ZE |
200mA / 30V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
FDS3692 |
Discrete Commercial N-Channel UltraFET Trench MOSFET, 100V, 4.5A, 0.060 Ohm @ Vgs = 10V, SO-8 Package N-Channel PowerTrench?? MOSFET 60V, 45A, 20m??? N-Channel PowerTrench MOSFET 100V, 45A, 60mohm
|
FAIRCHILD[Fairchild Semiconductor]
|